摘要：An ultra-fast method to directly grow metallic micro- and nano-structures is introduced. It relies on a Focused Ion Beam (FIB) and a condensed layer of suitable precursor material formed on the substrate under cryogenic conditions. The technique implies cooling the substrate below the condensation temperature of the gaseous precursor material, subsequently irradiating with ions according to the wanted pattern, and posteriorly heating the substrate above the condensation temperature. Here, using W(CO) 6 as the precursor material, a Ga + FIB, and a substrate temperature of -100 °C, W-C metallic layers and nanowires with resolution down to 38 nm have been grown by Cryogenic Focused Ion Beam Induced Deposition (Cryo-FIBID). The most important advantages of Cryo-FIBID are the fast growth rate (about 600 times higher than conventional FIBID with the precursor material in gas phase) and the low ion irradiation dose required (∼50 μC/cm 2 ), which gives rise to very low Ga concentrations in the grown material and in the substrate (≤0.2%). Electrical measurements indicate that W-C layers and nanowires grown by Cryo-FIBID exhibit metallic resistivity. These features pave the way for the use of Cryo-FIBID in various applications in micro- and nano-lithography such as circuit editing, photomask repair, hard masks, and the growth of nanowires and contacts. As a proof of concept, we show the use of Cryo-FIBID to grow metallic contacts on a Pt-C nanowire and investigate its transport properties. The contacts have been grown in less than one minute, which is considerably faster than the time needed to grow the same contacts with conventional FIBID, around 10 hours.
