摘要：In order to investigate the modification of the surface structure of FePS 3 via Ga + ion irradiation, we study the effect of thickness and Raman spectrum of multilayer FePS 3 irradiated for 0 μs, 30 μs, and 40 μs, respectively. The results demonstrate that the intensity ratio of characteristic Raman peaks are obviously related to the thickness of FePS 3 . After Ga + ion irradiation, the FePS 3 sample gradually became thinner and the E u peak and Eg(v 11 ) peak in the Raman spectrum disappeared and the peak intensity ratio of A 1g (v 2 ) with respect to A 1g (v 1 ) weakened. This trend becomes more apparent while increasing irradiation time. The phenomenon is attributed to the damage of bipyramid structure of [P 2 S 6 ] 4- units and the cleavage of the P-P bands and the P-S bands during Ga + ion irradiation. The results are of great significance for improving the two-dimensional characteristics of FePS 3 by Ga + ion beam, including structural and optical properties, which pave the way of surface engineering to improve the performance of various two-dimensional layered materials via ion beam irradiation.
