摘要：In order to explain the experimental sheet carrier density n 2D at the interface of BaSnO 3 /LaInO 3 , we consider a model that is based on the presence of interface polarization in LaInO 3 which extends over 2 pseudocubic unit cells from the interface and eventually disappears in the next 2 unit cells. Considering such interface polarization in calculations based on 1D Poisson-Schrödinger equations, we consistently explain the dependence of the sheet carrier density of BaSnO 3 /LaInO 3 heterinterfaces on the thickness of the LaInO 3 layer and the La doping of the BaSnO 3 layer. Our model is supported by a quantitative analysis of atomic position obtained from high resolution transmission electron microscopy which evidences suppression of the octahedral tilt and a vertical lattice expansion in LaInO 3 over 2-3 pseudocubic unit cells at the coherently strained interface.
