摘要：Fabrication of hydrogen-terminated diamond (H-diamond) field-effect transistor (FET) with AlO x dielectric layer has been successfully carried out. The AlO x layer was formed by auto-oxidizing 6 nm Al film in the air at room temperature, and a FET without AlO x dielectric layer has also been fabricated for comparison. For both FETs, 100 nm Al layers were deposited as the gate electrodes, respectively. The leakage current density in FET with AlO x dielectric layer was four magnitude orders lower than that without AlO x dielectric layer at V GS = −5 V, indicating that AlO x dielectric layer could effectively reduce leakage current and prevent reverse I D in I D − V DS caused by defects on diamond surface. Distinct pinch-off characteristic with p-type channel was observed in I D − V DS measurement. The threshold voltage was −0.4 V at V DS = −15 V.
