摘要：Resistive switching (RS) devices have attracted increasing attention for artificial synapse applications in neural networks because of their nonvolatile and analogue resistance changes. Among the neural networks, a spiking neural network (SNN) based on spike-timing-dependent plasticity (STDP) is highly energy efficient. To implement STDP in resistive switching devices, several types of voltage spikes have been proposed to date, but there have been few reports on the relationship between the STDP characteristics and spike types. Here, we report the STDP characteristics implemented in ferroelectric tunnel junctions (FTJs) by several types of spikes. Based on simulated time evolutions of superimposed spikes and taking the nonlinear current-voltage (I-V) characteristics of FTJs into account, we propose equations for simulating the STDP curve parameters of a magnitude of the conductance change (ΔG max ) and a time window (τ C ) from the spike parameters of a peak amplitude (V peak ) and time durations (t p and t d ) for three spike types: triangle-triangle, rectangular-triangle, and rectangular-rectangular. The power consumption experiments of the STDP revealed that the power consumption under the inactive-synapse condition (spike timing Δt > τ C ) was as large as 50-82% of that under the active-synapse condition ( Δt < τ C ). This finding indicates that the power consumption under the inactive-synapse condition should be reduced to minimize the total power consumption of an SNN implemented by using FTJs as synapses.
