摘要：Thanks to its high transparency, high carrier mobility, and thermal conductivity, graphene is often used as transparent conductive electrode (TCE) in optoelectronic devices. However, the low carrier concentration and high resistance caused by vacancy defects, grain boundaries, and superposed folds in typical graphene films limit its application. In this study, we propose a method to increase both the conductivity and carrier concentration in single-layer graphene (SLG) by blending it with silver nanowires (AgNWs). AgNWs provide connections between grain boundaries of graphene to improve charge-carrier transport. The AgNWs in this study can reduce the resistance of SLG from 650 Ω/◻ to 27 Ω/◻ yet still maintain a transmittance of 86.7% (at 550 nm). Flexible organic light-emitting diode, with a maximum 15000 cd m -2 luminance was successfully fabricated using such graphene and AgNWs composite transparent electrodes.
