摘要：Three-dimensional crossbar technology has been of great significance for realizing high density and multiple terabytes of data storage in memory devices. However, to further scale down the size of memory devices, a selector exhibiting nonlinear electrical properties should be in series with a memory layer in case of unwanted sneak current disturbance. Conventional selectors usually utilize a complicated multilayer structure to realize the high nonlinearity of current, which might be incompatible with certain manufacturing processes or limit the scalability of memory. Herein, we propose a simple heterojunction diode using an n-type oxide semiconductor, specifically, InGaZnO 4 (IGZO), and a p-type phase change material (PCM), specifically, N-doped Cr 2 Ge 2 Te 6 (NCrGT), to realize self-selective performance. The electrode/IGZO/NCrGT/plug-electrode structure with an IGZO/NCrGT pn diode and NCrGT/plug-electrode Schottky diode can realize bidirectional, self-selective phase change random access memory (PCRAM) for either amorphous or crystalline NCrGT. The approximate equilibrium energy band diagrams for the IGZO/NCrGT pn junction and the IGZO/NCrGT/W hybrid junction were proposed to explain the possible conduction mechanism. We demonstrated that hybrid diode-type PCM memory exhibits both selectivity and resistive switching characteristics. The present findings offer new insight into selector technology for PCM.
