摘要：Thin films ZnO:Ga were deposited on corning glass substrates with argon gas pressure 500 mtorr and variation temperature at 325o C, 375o C and 425o Cby DC-Magnetron Sputtering. The structural studies, optical and electricity properties of the thin films have been investigated by means of EDX, XRD, SEM, UvVis spectroscopy and I-V meter. The EDX result shows that thin films were deposited are ZnO:Ga thin films. The structuralstudies result from XRD shows that the ZnO:Ga thin films deposited have polycrystalline with the hexagonal wurtzite structure. ZnO:Ga films deposited at 325o C have the better crystal quality than the other. The XRD result is also appropriate to SEM observation. It was shown that at 325o C has grain size more homogenous than the other films. ZnO:Ga thin films deposited at 325o C have the optical transmittance ~89% and the band gap ~3,33 eV. The electric properties can be defined by using I-V meter and showed electrical conductivity 1.74x10ˉ3 (Ωcm)ˉ1 at deposited temperature 325o C.
其他摘要：Telah dilakukan deposisi film tipis ZnO:Ga di atas substrat kaca korning pada tekanan deposisi 500 mtorr dengan metode DC-magnetron sputtering. Film ditumbuhkan masing-masing pada suhu 325o C, 375o C, dan 425o C. Struktur, sifat optik dan sifat listrik fi
关键词：Temperature Variation; Thin Film ZnO:Ga; Dc Magnetron Sputtering
