摘要：In this study, nanoscale integrated all-optical XNOR, XOR, and NAND logic gates were realized based on all-optical tunable on-chip plasmon-induced transparency in plasmonic circuits. A large nonlinear enhancement was achieved with an organic composite cover layer based on the resonant excitation-enhancing nonlinearity effect, slow light effect, and field confinement effect provided by the plasmonic nanocavity mode, which ensured a low excitation power of 200 μW that is three orders of magnitude lower than the values in previous reports. A feature size below 600 nm was achieved, which is a one order of magnitude lower compared to previous reports. The contrast ratio between the output logic states “1” and “0” reached 29 dB, which is among the highest values reported to date. Our results not only provide an on-chip platform for the study of nonlinear and quantum optics but also open up the possibility for the realization of nanophotonic processing chips based on nonlinear plasmonics.
