摘要：ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail.
