摘要：The paper presents a mathematical model of radon accumulation in a chamber, which takes into account the hereditary properties of the environment in which radon migrates, and also uses a nonlinear function that is responsible for the mechanisms of radon entering the chamber. The simulation of accumulation is performed in comparison with real data. It is shown that the model presented in this work gives a better agreement between the model and real curves of radon accumulation and can be used for a more accurate description of the processes occurring in the chamber.
