摘要：Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity. And another reason is the MOSFET with Gallium Nitride applied in power switching. However, transistors-related EE major (Electronic and Electrical engineering) courses are still focusing on the old silicon-based transistors, which own many deficiencies. In this paper, the current status of Gallium Nitride based MOSFET is investigated. Besides, a comparison in conducting capability, sensitivity and power efficiency between the MOSFET IRF510 and the Gallium Nitride based product GS-065-008-1-L is carried out. After the comparison, the application of MOSFET in EE courses is suggested and the priorities and difficulties are discussed as well.
