摘要：In this study, the effect of temperature on the SiC grain size was investigated in the synthesis of hexagonal boron nitride-silicon carbide (hBN-SiC) composites. Samples were sintered at 1700°C, 1800°C, 1900°C and 2000°C, under 50MPa pressure for 15 minutes by spark plasma sintering (SPS). In order to determine the effect of sintering temperature on the SiC grain size, grain sizes were measured by ImageJ program. Grain size distributions were determined by using normal distribution function. When the temperature was increased from 1700°C to 1900°C, the amount of h-BN increased by 0.9% and remained unchanged at 2000°C. When the temperature was increased from 1700°C to 2000°C, the average grain size of SiC increased from 1.9 μm to 1.96 μm. The standard deviation values of grain size distribution increased from 0,445 at 1700°C to 0,812 at 2000°C. Depending on the temperature, the grain size distribution has increased. Due to the strong covalent bonds and plate-like structure of hBN, it has poor sinterability. Because of this feature, it can be said that the growth of SiC grains is slowed down by hBN.
其他摘要：Bu çalışmada hekzagonal bor nitrür- silisyum karbür (hBN-SiC) kompozit sentezinde sıcaklığın SiC tane boyutu üzerine etkisi araştırılmıştır. Numunelerin SPS ile 1700°C, 1800°C, 1900°C ve 2000°C’de farklı sıcaklıklarda 50MPa basınç altında 15dak sinterleme
