摘要：The purpose of this study is to examine the effects of interface states and series resistance (Rs) on the electrical characteristic of Sc2O3 (Scandium oxide) MOS (Metal Oixde Semiconductor) capacitor depending on frequency. Sc2O3 MOS capacitor was produced on p type Si (100) with RF magnetron sputtering. Capacitance-voltage (C-V) and Conductance-voltage (G/ω-V) variations of the capacitor were measured in six different frequencies ranging from 50 kHz to 1 MHz. The obtained results showed that the capacitance values in the accumulation region of the C-V curve were lower than expected due to the Rs effect. The peaks were not clearly formed due to this effect in the G/ω-V characteristics. For this reason, the effect of trap charges on the electrical characteristics of the Sc2O3/Si interface was investigated after Rs correction applied to the experimental results. The interface trap-charges contributed to the measured capacitance with decreasing frequency by following the AC voltage signal. The carrier concentration for p type Si (Na), barrier height (ΦB), and energy difference between the bulk Fermi level and valance band edge (EF) values were calculated by using corrected C-V and G/ω-V measurements.
其他摘要：Bu çalışmanın amacı, ara yüzey seviyelerinin ve seri direcin (Rs) Sc2O3 (Skandiyum oksit) MOS (Metal Oksit Yarıiletken) kapasitörünün elektriksel karakteristiği üzerine etkisini frekansa bağlı olarak incelemektir. Sc2O3 MOS kapasitörü RF magnetron saçtırm
关键词：high-k;MOS;Sc2O3;series resistance;interface states
其他关键词：yüksek-k;MOS;Sc2O3;seri direnç;ara yüzey seviyeleri
