期刊名称：Journal of Theoretical and Applied Information Technology
印刷版ISSN：1992-8645
电子版ISSN：1817-3195
出版年度：2020
卷号：98
期号：11
页码：1927-1936
出版社：Journal of Theoretical and Applied
摘要：This paper deals with the macromodelling of the CoolMOS power transistor. A novel power CoolMOS transistor macromodel giving accurate results is setting up. It is based on the subdivision of the CoolMOS power transistor into an intrinsic MOSFET, a JFET, a Zener diode and a voltage-controlled voltage source. All these components are incorporated within a sub-circuit in order to describe the power CoolMOS transistor effects like saturation and quasi-saturation. These effects as well as the parameters extraction procedure will be explained clearly in this paper while introducing the new sub-circuit model. The effectiveness of the proposed model has been verified by comparing the proposed model simulation results under PSpice with the results of datasheets given by manufacturers and with the models presented by Infineon Technologies. Our model provides an accurate description in all operation regions for DC characteristics. It gives less than 5.5% as an average error percentage for the output characteristics.
