摘要：Topological materials, such as the quintessential topological insulators in the Bi2X3 family (X = O, S, Se, Te), are extremely promising for beyond Moore’s Law computing applications where alternative state variables and energy efficiency are prized. It is essential to understand how the topological nature of these materials changes with growth conditions and, more specifically, chalcogen content. In this study, we investigate the evolution of the magnetoresistance of Bi2TexSe3−x for varying chalcogen ratios and constant growth conditions as a function of both temperature and angle of applied field. The contribution of 2D and 3D weak antilocalization are investigated by utilizing the Tkachov-Hankiewicz model and Hakami-Larkin-Nagaoka models of magnetoconductance.
