摘要：The manufacturing cost of quantum cascade lasers is still a major bottleneck for the adoption of this technology for chemical sensing. The integration of Mid-Infrared sources on Si substrate based on CMOS technology paves the way for high-volume low-cost fabrication. Furthermore, the use of Si-based fabrication platform opens the way to the co-integration of QCL Mid-InfraRed sources with SiGe-based waveguides, enabling realization of optical sensors fully integrated on planar substrate. We report here the fabrication and the characterization of DFB-QCL sources using top metal grating approach working at 7.4 µm fully implemented on our 200 mm CMOS pilot line. These QCL featured threshold current density of 2.5 kA/cm² and a linewidth of 0.16 cm−1 with a high fabrication yield. This approach paves the way toward a Mid-InfraRed spectrometer at the silicon chip level.
