摘要：Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In 2 O 3 as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8 × 10 -4 Ω.cm) and highest carrier concentration (4.23 × 10 20 cm -3 ) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.
