摘要：Abstract By applying an interdigitated back contacted solar cell concept with poly-Si on oxide passivating contacts an efficiency of 26.1% was achieved recently. In this paper the impact of the implemented initially intrinsic poly-Si region between p -type poly-Si and n -type poly-Si regions is investigated. Two recombination paths are identified: The recombination at the interface between the initially intrinsic poly-Si and the wafer as well as the recombination across the resulting p ( i ) n diode on the rear side which is aimed to be reduced by introducing an initially intrinsic region. By using test structures, it is demonstrated that the width of the initially intrinsic region (( i ) poly-Si region) has a strong influence on the recombination current through the p ( i ) n diode and that this initially intrinsic region needs to be about 30 μm wide to sufficiently reduce the recombination across the p ( i ) n diode. Lateral and depth-resolved time of flight secondary ion mass spectrometry analysis shows that the high-temperature annealing step causes a strong lateral inter-diffusion of donor and acceptor atoms into the initially intrinsic region. This diffusion has a positive impact on the passivation quality at the c-Si/SiO x / i poly-Si interface and is thus essential for achieving an independently confirmed efficiency of 26.1% with 30 μm-wide initially intrinsic poly-Si regions.
