摘要：Through silicon via (TSV) is one of the most important technologies used in three dimension (3D) packaging. The void-free filling of TSV can be achieved by adding additives into the electrolyte bath during the electrodeposition process. This paper focuses on the effects of three types of commercial additives (the suppressor, the leveler and the accelerator) and analyses additives’ interaction on electroplating through experimental investigations. The results showed that the suppressor, the leveler and the accelerator all have chemical behaviour of inhibition in different degrees to the copper electroplating. The interaction experiments of additives in pairs indicated that the suppressor absorbed on the cathode surface was gradually displaced by the accelerator as the concentration of the accelerator increased; the accelerator and the leveler presented a competitive adsorption relationship; the suppressor and the leveler had a synergistic effect for electroplating inhibition especially under high potential and low suppressor concentration. Experiments of micro via filling by electrodeposition have been conducted to investigated the effects of singular additive and multiple additives on the filling process of the micro vias.
