摘要：Applications of correlated vanadium dioxides VO2(A) and VO2(B) in electrical devices are limited due to the lack of effective methods for tuning their fundamental properties. We find that the resistivity of VO2(A) and VO2(B) is widely tunable by doping them with tungsten ions. When x < 0.1 in V1−xWxO2(A), the resistivity decreases drastically by four orders of magnitude with increasing x, while that of V1−xWxO2(B) shows the opposite behaviour. Using spectroscopic ellipsometry and X-ray photoemission spectroscopy, we propose that correlation effects are modulated by either chemical-strain-induced redistribution of V−V distances or electron-doping-induced band filling in V1−xWxO2(A), while electron scattering induced by disorder plays a more dominant role in V1−xWxO2(B). The tunable resistivity makes correlated VO2(A) and VO2(B) appealing for next-generation electronic devices.
