摘要：Abstract We present a study of $$\hbox {V}_{2}\hbox {O}_{3}$$ V 2 O 3 thin films grown on c -plane $$\hbox {Al}_{2}\hbox {O}_{3}$$ Al 2 O 3 substrates by reactive dc-magnetron sputtering. Our results reveal three distinct types of films displaying different metal–insulator transitions dependent on the growth conditions. We observe a clear temperature window, spanning 200 $$^{\circ }$$ ∘ C, where highly epitaxial films of $$\hbox {V}_{2}\hbox {O}_{3}$$ V 2 O 3 can be obtained wherein the transition can be tuned by controlling the amount of interstitial oxygen in the films through the deposition conditions. Although small structural variations are observed within this window, large differences are observed in the electrical properties of the films with strong differences in the magnitude and temperature of the metal–insulator transition which we attribute to small changes in the stoichiometry and local strain in the films. Altering the sputtering power we are able to tune the characteristics of the metal–insulator transition suppressing and shifting the transition to lower temperatures as the power is reduced. Combined results for all the films fabricated for the study show a preferential increase in the a lattice parameter and reduction in the c lattice parameter with reduced deposition temperature with the film deviating from a constant volume unit cell to a higher volume.
其他摘要：Abstract We present a study of $$\hbox {V}_{2}\hbox {O}_{3}$$ V 2 O 3 thin films grown on c -plane $$\hbox {Al}_{2}\hbox {O}_{3}$$ Al 2 O 3 substrates by reactive dc-magnetron sputtering. Our results reveal three distinct types of films displaying different metal–insulator transitions dependent on the growth conditions. We observe a clear temperature window, spanning 200 $$^{\circ }$$ ∘ C, where highly epitaxial films of $$\hbox {V}_{2}\hbox {O}_{3}$$ V 2 O 3 can be obtained wherein the transition can be tuned by controlling the amount of interstitial oxygen in the films through the deposition conditions. Although small structural variations are observed within this window, large differences are observed in the electrical properties of the films with strong differences in the magnitude and temperature of the metal–insulator transition which we attribute to small changes in the stoichiometry and local strain in the films. Altering the sputtering power we are able to tune the characteristics of the metal–insulator transition suppressing and shifting the transition to lower temperatures as the power is reduced. Combined results for all the films fabricated for the study show a preferential increase in the a lattice parameter and reduction in the c lattice parameter with reduced deposition temperature with the film deviating from a constant volume unit cell to a higher volume.
