摘要：Wide-bandgap (wide- E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide- E g PSCs with a minimized open-circuit voltage ( V oc ) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide- E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc . Incorporation of TBB prolongs carrier lifetimes in wide- E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).
关键词：1;3;5-tris (bromomethyl) benzene; defect passivation; perovskite solar cells; wide-bandgap perovskite.
