期刊名称：International Journal on Smart Sensing and Intelligent Systems
印刷版ISSN：1178-5608
出版年度：2020
卷号：13
期号：1
页码：1-10
DOI：10.21307/ijssis-2020-032
出版社：Massey University
摘要：Fin-typed field effect transistor (FinFET) has considered a suitable device for low power and high-performance applications. The incorporation of gate dielectric lanthanum doped zirconium oxide (LaZrO 2 ) in the 14 nm silicon on insulator (SOI) FinFET not only enhanced effective carrier mobility but also diminished the short channel effects (SCEs). The FinFET embodiment with LaZrO 2 has dwindled subthreshold swing (SS), reduced drain-induced barrier lowering (DIBL), and raised on-current to off-current ratio as a contrast to SiO 2 -based FinFET. A remarkable enhancement of 1.18×, 11×, and 1.3× for transconductance ( g m ), early voltage ( V EA ), and an intrinsic gain ( A V ), respectively, have been investigated. Further, LaZrO 2 -based n-FinFET and p-FinFET devices have devised with equal dimensions. The improved noise margin of 0.375 V using a single-fin FinFET-based inverter circuit has proven the acceptance of this device in a circuit application.
