期刊名称：Advances in Electrical and Computer Engineering
印刷版ISSN：1582-7445
电子版ISSN：1844-7600
出版年度：2016
卷号：16
期号：3
页码：3-8
DOI：10.4316/AECE.2016.03001
出版社：Universitatea "Stefan cel Mare" Suceava
摘要：In this article we investigate the possibility to use scanning capacitance microscopy (SCM) for the 2-D and 3-D "atomistic" dopant profiling of semiconductor materials. For this purpose, we first analyze the effects of random dopant fluctuations (RDF) on SCM measurements with nanoscale probes and show that the discrete and random locations of dopant impurities significantly affect the differential capacitance measured in SCM experiments if the dimension of the probe is below 50 nm. Then, we present an algorithm to compute the x, y, and z coordinates of the ionized impurities in the semiconductor material using a set of SCM measurements. The algorithm is based on evaluating the doping sensitivity functions of the differential capacitance and uses a gradient-based iterative method to compute the locations of dopants. Finally, we discuss a standard simulation case and show that we are able to successfully retrieve the locations of the ionized impurities using the proposed algorithm.
