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  • 标题:Performance Analysis of Trench Power MOSFETs in High-Frequency Synchronous Buck Converter Applications
  • 本地全文:下载
  • 作者:Yali Xiong ; Xu Cheng ; Xiangcheng Wang
  • 期刊名称:Advances in Power Electronics
  • 印刷版ISSN:2090-181X
  • 电子版ISSN:2090-1828
  • 出版年度:2008
  • 卷号:2008
  • DOI:10.1155/2008/412175
  • 出版社:Hindawi Publishing Corporation
  • 摘要:This paper investigates the performance perspectives and theoretical limitations of trench power MOSFETs in synchronous rectifier buck converters operating in the MHz frequency range. Several trench MOSFET technologies are studied using a mixed-mode device/circuit modeling approach. Individual power loss contributions from the control and synchronous MOSFETs, and their dependence on switching frequency between 500 kHz and 5 MHz are discussed in detail. It is observed that the conduction loss contribution decreases from 40% to 4% while the switching loss contribution increases from 60% to 96% as the switching frequency increases from 500 KHz to 5 MHz. Beyond 1 MHz frequency there is no obvious benefit to increase the die size of either SyncFET or CtrlFET. The RDS(ON)×QG figure of merit (FOM) still correlates well to the overall converter efficiency in the MHz frequency range. The efficiency of the hard switching buck topology is limited to 80% at 2 MHz and 65% at 5 MHz even with the most advanced trench MOSFET technologies.
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