摘要：Modern electronical devices use high integration to decrease device size and cost and to increase reliability. More and more
devices appear that integrate even power devices into VLSI circuits. When driving inductive loads, this is a critical step because
freewheeling at a power device appears. In these applications usually special technologies with extra wells for the power devices,
SOI technologies, or BiCMOS technologies are required to suppress any substrate current. However, the use of these technologies
results in higher production cost for the device. We present a method to control the freewheeling actively. Using this approach we
are able to integrate the power devices using a normal CMOS technology.
