期刊名称：International Journal of Computer Science and Network Security
印刷版ISSN：1738-7906
出版年度：2008
卷号：8
期号：6
页码：266-270
出版社：International Journal of Computer Science and Network Security
摘要：A theoretical study of triple barrier resonant tunneling diode with multilayer GaAs/AlxGa1-xAs heterostructure is presented based on an exact solution of the Schrodinger equation under the application of a constant electric field and a uniform magnetic field. Using propagation matrix method (PMM), the transmissivity of the structure is calculated as a function of the incident electron energy for different values of applied voltage. The results show good agreement with other existing models.
