摘要：To ensure a reliable long term performance in the harsh radiation environment of present and future high energyexperiments, silicon detectors are required to be operated at voltages beyond, sometimes quite far from, the full depletionvoltages. It is, thus desirable to improve breakdown voltage characteristics of silicon sensors, and floating guardrings are generally employed to perform this task. However, it is important to understand the application of guard ringsunder the influence of various physical and geometrical parameters, both for its optimal design and to gain physicalinsight. In this work, a TCAD based simulation is performed for the detailed study of the silicon sensors equipped withfloating guard rings. The results also establish the criteria for optimizing guard ring spacing under various conditions.
关键词：Si detector guard ring ; high voltage guard ring
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