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文章基本信息

  • 标题:The Temperature Dependence of Fluctuations Currents During the Metal - Semiconductor Contact
  • 作者:I.M.Afandiyeva
  • 期刊名称:Journal of Qafqaz Universty
  • 印刷版ISSN:1302-6763
  • 出版年度:2006
  • 卷号:17
  • 出版社:Qafqaz University
  • 摘要:In the present paper on the basis of volt-carrient (I-V) and volt-capasity characteristics (C-V) analysis the participation of several mechanisms of carry depending on the temperature is revealed. It is shown, that the change of carrers character connected to presence of additional sources of the carriers which have caused fluctuations of potential.
  • 关键词:Schottky diodes,barrier inhomogeneties,tunnelling.
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