期刊名称：Advances in Electrical and Computer Engineering
印刷版ISSN：1582-7445
电子版ISSN：1844-7600
出版年度：2007
卷号：7
期号：1
页码：9-12
出版社：Universitatea "Stefan cel Mare" Suceava
摘要：The functional limits of an IGBT are defined by an essential parameter: the maximum junction temperature permitted. The technical specifications of each IGBT type provide the limit values of the functional temperature for example, from -55 C to 150 C. The electrical energy dissipated by the IGBT for any current direction, appears in form of thermal energy at the junctions level. But we should bear in mind that the ambient temperature represents an energetic level through which is insured the raise of the junction temperature.
关键词：punch-trough IGBT ; high frequency ; temperature of junction ; tailing current
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