文章基本信息
- 标题：Tetracene Based OTFT with Nd 2 O 3 -dielectric Layer
- 本地全文：下载
- 作者：D. Saikia ; R. Sarma ; P. Saikia 等
- 期刊名称：Journal of Scientific Research
- 印刷版ISSN：2070-0237
- 电子版ISSN：2070-0245
- 出版年度：2010
- 卷号：2
- 期号：02
- 页码：214-220
- DOI：10.3329/jsr.v2i2.4094
- 出版社：Rajshahi University
- 摘要：
Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10-4 cm2/V.s, ON-OFF ratio 3.3x102, sub-threshold swing 0.06 V/decade and hole concentration 8.74x1017 cm-3.
Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density.
© 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.
DOI: 10.3329/jsr.v2i2.4094 J. Sci. Res. 2 (2), 214-220 (2010)
- 关键词：Organic thin film transistors
