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  • 标题:Effects of Incidence Angle on Nanoscale Radiative Properties of Doped Silicon Multilayer Structures
  • 本地全文:下载
  • 作者:S.A.A. Oloomi ; A. Saboonchi ; A. Sedaghat
  • 期刊名称:World Applied Sciences Journal
  • 印刷版ISSN:1818-4952
  • 电子版ISSN:1991-6426
  • 出版年度:2010
  • 卷号:8
  • 期号:10
  • 出版社:International Digital Organization for Scientific Information Publications
  • 摘要:

    This work uses transfer-matrix method for calculating the radiative properties. Doped silicon is used
    and Coherent Formulation is applied. The considered wavelengths are 0.5 ìm for visible range and 0.9 ìm for
    infrared wavelength. Results showed that in visible wavelength, reflectance increases when incidence
    angle increases up to 50° and then a little decreasing happens for reflectance till incidence angle reaches 65°.
    Reflectance increases rapidly for incidence angle between 65° to 89°. In infrared wavelength, reflectance
    increases smoothly with increasing in incidence angle up to 54° for silicon dioxide coating and then it increases
    rapidly. But for silicon nitride coating the reflectance decreases with increasing incidence angle up to 54° and
    then it increases rapidly. In infrared wavelength, Silicon dioxide coating has higher emittance than silicon nitride
    coating for 0°#2# 17° and 82°#2#89°, but for 18° #2# 81° silicon nitride coating has higher emittance than
    silicon dioxide coating. Therefore thermal radiaitive properties of nanoscale multilayer structures strongly
    depend on incidence angle.

  • 关键词:Incidence Angle ; Emittance ; Reflectance ; Doped Silicon and Nanoscale
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