期刊名称：Bulletin of the Technical Committee on Data Engineering
出版年度：2010
卷号：33
期号：04
出版社：IEEE Computer Society
摘要：A great deal of research has been done on solid-state storage media such as flash memory and non-volatile
memory in the past few years. While NAND-type flash memory is now being considered a top alternative to
magnetic disk drives, non-volatile memory (also known as storage class memory) has begun to appear in
the market recently. Although some advocates of non-volatile memory predict that flash memory will give
way to non-volatile memory soon, we believe that they will co-exist, complementing each other, for a while
until the hurdles in its manufacturing process are lifted and non-volatile memory becomes commercially
competitive in both capacity and price. In this paper, we present an improved design of In-Page Logging
(IPL) by augmenting it with phase change RAM (PCRAM) in its log area. IPL is a buffer and storage man-
agement strategy that has been proposed for flash memory database systems. Due to the byte-addressability
of PCRAM and its faster speed for small reads and writes, the IPL scheme with PCRAM can improve the
performance of flash memory database systems even further by storing frequent log records in PCRAM
instead of flash memory. We report a few advantages of this new design that will make IPL more suitable
for flash memory database systems
