期刊名称：Proceedings of the National Academy of Sciences
印刷版ISSN：0027-8424
电子版ISSN：1091-6490
出版年度：2004
卷号：101
期号：37
页码：13408-13410
DOI：10.1073/pnas.0404450101
语种：English
出版社：The National Academy of Sciences of the United States of America
摘要：A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths of {approx}10-50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths of {approx}10 nm, near the mean free path of lop {approx} 15 nm for optical phonon scattering, exhibit nearly ballistic transport at high biases and can carry unprecedented 100-{micro}A currents per tube. Semiconducting SWCNT fieldeffect transistors with {approx}50-nm channel lengths are routinely produced to achieve quasi-ballistic operations for molecular transistors. The results demonstrate highly length-scaled and high-performance interconnects and transistors realized with SWCNTs.
