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  • 标题:The Size of Localized States Near the Mobility Edge
  • 本地全文:下载
  • 作者:P. W. Anderson
  • 期刊名称:Proceedings of the National Academy of Sciences
  • 印刷版ISSN:0027-8424
  • 电子版ISSN:1091-6490
  • 出版年度:1972
  • 卷号:69
  • 期号:5
  • 页码:1097-1099
  • DOI:10.1073/pnas.69.5.1097
  • 语种:English
  • 出版社:The National Academy of Sciences of the United States of America
  • 摘要:The "mobility edge" is the critical point at which a transition from localized to extended character of the eigenfunctions occurs in the random lattice problem. We study the behavior of the eigenfunctions as this critical point is approached, and produce arguments that suggest that they fall off, on the average, as exp(-[α])R with range R, and that [α] [α] [E - Ec]0.6
  • 关键词:amorphous semiconductors ; localizability
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