出版社：SISSA, Scuola Internazionale Superiore di Studi Avanzati
摘要：This paper reports on recent test beam and laboratory results performed on 3D strip and pixel detectors. The devices were produced using a special double-sided 3D technology aimed to simplify the fabrication process, where the columnar electrodes etched into the silicon do not pass through the full substrate thickness. Double-sided 3D n-in-p strip detectors show good electrical and charge collection characteristics after heavy irradiation up to 21016neq=cm2. An effect of charge multiplication is observed at high bias voltages, both in laboratory tests with radioactive source and in beam tests with pions. This multiplication effect is beneficial for the signal-to-noise ratio for moderate voltages and values > 40 can be achieved. The detection efficiency and charge sharing properties of the 3D structure have been investigated in Medipix2 pixel detectors with micro-focus synchrotron X-rays and pion beams and compared to that of the standard planar technology. There is a drop in the detection efficiency over the pixel of the 3D sensors due to the central electrodes, however the corner electrodes do not represent a significant degradation of the efficiency compared to that of the planar devices. The 3D sensors show a considerably reduced charge sharing compared to planar detectors that makes them very interesting for imaging applications.
