出版社：SISSA, Scuola Internazionale Superiore di Studi Avanzati
摘要：Charge multiplication (CM) occuring in highly radiation-damaged Si sensors is currently under discussion as an option to overcome the strong trapping of charge carriers in the innermost pixel layers of future Super-LHC detectors. In this work, CM was studied in p+-n epitaxial silicon pad diodes of 75, 100 and 150 m thickness after 24 GeV/c proton irradiation with 1 MeV neutron equivalent fluences in the order of 1016 cm2. Basic properties like the development and location of the CM region, proportionality between measured and deposited charge, spatial uniformity and long-term stability, which were studied with charge collection efficiency (CCE) measurements using the Transient Current Technique (TCT), are reviewed. Using 90Sr b-particles and an amplifier with 25 ns shaping time the signal in the CM regime for radiation similar to minimum ionising particles was investigated. Also associated noise, signal-to-noise ratio and effects of CM on the charge spectrum were studied.
