出版社：SISSA, Scuola Internazionale Superiore di Studi Avanzati
摘要：We are developing monolithic pixel detectors utilizing a silicon-on-insulator (SOI) process commercially provided by OKI Semiconductor. Two main pixel sensors, INTPIX and CNTPIX, are being designed as signal integration and counting type devices, respectively. We describe the fabrication results including a buried p-well (BPW) technology recently adopted. The BPW is a breakthrough suppressing the back-gate effect. The radiation resistance of the BPW was also investigated. The ultimate solution to the back-gate effect suppression is stacking of two SOI wafers. We are investigating a 3D process. We also describe the successful results of thinning the wafer to 100 μm.
