摘要：A complete design strategy (mechanical and electrical) for a 25 W
28 V/5 V dc-dc converter utilizing SiC and SOI electronics is presented. The
converter includes a high-temperature SOI-based PWM controller featuring 150 kHz
operation, a PID feedback loop, maximum duty cycle limit, complementary or symmetrical outputs,
and a bootstrapped high-side gate driver. Several passive technologies were investigated for both
control and power sections. Capacitor technologies were characterized over temperature and over
time at 300C∘, power inductors designed and tested up to 350C∘, and power transformers designed and tested up to 500C∘. Northrop Grumman normally-off SiC JFETs were used as power switches
and were characterized up to 250C∘. Efficiency and mass optimization routines were developed with the data gained
from the first prototype. The effects of radiation on SiC and SOI electronics are then discussed. The results
of the first prototype module are presented, with operation from 25C∘ up to an ambient temperature of 240C∘ .
