期刊名称：International Journal of Antennas and Propagation
印刷版ISSN：1687-5869
电子版ISSN：1687-5877
出版年度：2012
卷号：2012
DOI：10.1155/2012/823089
出版社：Hindawi Publishing Corporation
摘要：We have successfully prepared Cu–Al–O films on silicon (100) and quartz substrates with copper and aluminum composite target by using radio frequency (RF) magnetron sputtering method. We have related the structural and optical-electrical properties of the films to the sputtering area ratio of Cu/Al for the target (𝑟Cu/Al). The deposition rate of the film and 𝑟Cu/Al can be fitted by an exponential function. 𝑟Cu/Al plays a critical role in the final phase constitution and the preferred growth orientation of the CuAlO2 phase, thus affecting the film surface morphology significantly. The film with main phase of CuAlO2 has been obtained with 𝑟Cu/Al of 45%. The films show p-type conductivity. With the increase of 𝑟Cu/Al, the electrical resistivity decreases first and afterwards increases again. With 𝑟Cu/Al of 45%, the optimum electrical resistivity of 80 Ω⋅cm is obtained, with the optical transmittance being 72%–79% in the visible region (400–760 nm). The corresponding direct band gap and indirect band gap are estimated to be 3.6 eV and 1.7 eV, respectively.
