摘要：The paper concentrates on the study of reflection and transmission characteristics of acoustic waves at the interface of a semiconductor half-space underlying an inviscid liquid. The reflection and transmission coefficients varying with the incident angles are examined. Calculated results are verified by considering the quasilongitudinal (𝑞𝑃) and quasitransverse (𝑞𝑆𝑉) waves. The special cases of normal and grazing incidence are also derived and discussed. Finally, the numerical computations of reflection and transmission coefficients are carried out with the help of Gauss elimination method by using MATLAB programming software for silicon (Si) and germanium (Ge) semiconductors. The computer simulated-results have been plotted graphically for Si and presented in tabular form in case of Ge semiconductors. The study may be useful in semiconductors, geology, and seismology in addition to surface acoustic wave (SAW) devices.
