期刊名称：International Journal of Research and Innovation in Computer Engineering
电子版ISSN：2249-6580
出版年度：2011
卷号：1
期号：1
页码：1-5
出版社：Innovation Science Publications
摘要：SOCs are sensitive to substrate noise coupling as so many components, RF blocks/mixed signal blocks are placed nearer to each other that can lead to crosstalk problem. It could lead to total destructive performance of a circuit. Various modeling techniques, used to determine substrate noise are discussed with some practical simulation. For simulation, HFSS is used. Solution is in the form of S-parameters at high frequencies. Results are indicators of the relation between resistance and distance between two contacts on substrate. With variation in substrate thickness, frequency of operation, distance between contacts, substrate noise coupling is visualized
关键词：Doping; Finite Element Method; SOC; Substrate; substrate noise coupling.
