标题：Numerical Evaluation of Junction Temperature Effect on Negative Resistivity at Different Current Densities of Si DDR IMPATT Device at Sub-millimeterwave Region
期刊名称：International Journal of Soft Computing & Engineering
电子版ISSN：2231-2307
出版年度：2012
卷号：1
期号：6
页码：145-148
出版社：International Journal of Soft Computing & Engineering
摘要：Negative resistivity profile for Si DDR IMPATT device is numerically computed by double-iterative method with incorporation of modified Runge-Kutta method at different junction temperatures and bias current densities for different operating frequency bands in sub-millimeterwave region. Profiles are obtained throughout the depletion layer width for 1-D model consideration and assuming independence of carrier velocities over electric field in avalanche and drift regions; whereas both conduction and displacement current densities are taken into account. Analysis is helpful for comparative study of device performance with different heat sink materials.
