期刊名称：International Journal of Soft Computing & Engineering
电子版ISSN：2231-2307
出版年度：2012
卷号：2
期号：3
页码：502-507
出版社：International Journal of Soft Computing & Engineering
摘要：Single-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. Single electron transistor [SET] is a new nanoscaled switching device because single-electron transistor retains its scalability even on an atomic scale and besides this; it can control the motion of a single electron. Here, scalability means that the performance of electronic devices increases with a decrease of the device dimensions. Since, Power consumption is roughly proportional to the electron number transferred from voltage source to the ground in various logic operations. Therefore, the single- electron transistor [SET] is generally utilized as an ULSI element to reduce the power consumption of ULSIs. Thus, the Single electron transistor [SET] can offer low power consumption and the controlled tunneling of a single electron makes its high operating speed. The goal of this paper is to discuss about the basic physics of nano electronic device ‘Single electron transistor [SET]’ which is capable of controlling the transport of only one electron. In this paper, we also focus on some basic device characteristics like ‘Coulomb blockade’, single electron tunneling effect & ‘Coulomb staircase’ on which this Single electron transistor [SET] works and the basic comparison of SET & FET characteristics and also its [SET] advantages as well as disadvantages to make a clear picture about the reason behind its popularity in the field of nanoelectronics.
关键词：Coulomb blockade; Classical theory; Quantum;dot; single electron tunneling.
