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  • 标题:Analysis and Comparative Study of Different Parameters of Operational Amplifier Using Bipolar Junction Transistor and Complementary Metal Oxide Semiconductor Using Tanner Tools
  • 本地全文:下载
  • 作者:Ankit Kapil ; Arpan Shah ; Rekha Agarwal
  • 期刊名称:International Journal of Soft Computing & Engineering
  • 电子版ISSN:2231-2307
  • 出版年度:2012
  • 卷号:2
  • 期号:5
  • 页码:19-23
  • 出版社:International Journal of Soft Computing & Engineering
  • 摘要:Operational amplifier (Op-Amp) is used in linear AC operation and is widely used in electronic industry. What follows are two operational amplifier designs using bipolar junction transistor (BJT) technology and metal oxide field effect transistor (CMOS) technology. Presented designs will focus on the characteristics of both BJT and CMOS.BJT invented in 1940’s and CMOS came in 1960’s and became popular due to low power because it draws current when switching states. In this analysis I will cover various aspects of an op-amp like power consumption, offset voltage for small signal and large signal mode, input bias current, input offset current, gain and frequency response, maximum and minimum voltage swing, slew rate etc. Operational Amplifier are important building blocks for a wide range of electronic circuits. They used in many linear, non-linear and frequency-dependent circuits so they are most widely used electronic device ,being used in a vast array of consumer, Industrial and Scientific devices-MOS amplifiers can be operated with power supplies down to 1.5 to 2.0 volts. This is using now a days in several advanced technologies like cell phones, smart phones ,I-pod and many more because it is many advantageous from electronic industry point of view. In my work I will cover the following points. 1. I will analyze and compare the different parameters of Op-amp using BJT and CMOS using tanner tools. 2. Different waveforms will be finding out by manipulating different parameters in the circuit design and mathematical calculation and comparison will be done. 3. At last all the results of different parameters which is obtained by different simulations using programming on T-Spice window will be summarized in a table then conclusion will be presented.
  • 关键词:Op-amp; voltage swing; offset voltage; bias current;offset current; slew rate; power dissipation; gain and frequency;response.
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