期刊名称：International Journal of Soft Computing & Engineering
电子版ISSN：2231-2307
出版年度：2012
卷号：2
期号：5
页码：286-291
出版社：International Journal of Soft Computing & Engineering
摘要：In this paper a novel approach for designing of High Breakdown Voltage and Power Dissipation of 6H-SiC DIMOSFET Using Uniformly Doped Profile of Drift Region has been presented. All the calculations& graphs for Forward Voltage, Power Dissipation, On Resistance and Drain to Source Voltage at different levels of doping for different values of Current Density have been observed using MATLAB 7.0 .
关键词：DIMOSFET; Forward Voltage; Power;Dissipation; On Resistance; Drain to Source Voltage;Current Density; Doping; MATLAB
