期刊名称：International Journal of Soft Computing & Engineering
电子版ISSN：2231-2307
出版年度：2013
卷号：2
期号：6
页码：516-520
出版社：International Journal of Soft Computing & Engineering
摘要：The crystallization of hydrogenated amorphous silicon layers (a-Si:H) [1,2] deposited by plasma enhanced chemical vapor deposition (PECVD) is of great interest. Generally, laser or metals are used to induce crystallization in a- Si:H films. We have found that films deposited at high rf power (> 0.2 W/cm2) by PECVD technique shows some crystallites embedded in a-Si:H matrix and their after its vacuum thermal annealing at 250 and 300 oC helps to further enhancement of crystallite size. These films were characterized using , UV-VIS spectrometry, Raman Spectra, of these films were measured as a function of temperature in the range of 300 oC to 250 oC.
