期刊名称：International Journal of Soft Computing & Engineering
电子版ISSN：2231-2307
出版年度：2013
卷号：3
期号：2
页码：6-10
出版社：International Journal of Soft Computing & Engineering
摘要：IMPATT diode is a p n junction diode reversed bias to breakdown and can generate microwave power when embedded in a resonant cavity. From the date of its inception it is increasingly proving its worth as a prime solid state source for microwave and mm-wave frequency. The available structures of IMPATT are SDR, DDR, DAR, lo-high-lo, etc which shows gradually better efficiency and power output for different materials like Wz-GAN, InP, GaAs, Si, Ge. A detailed study in terms of the following parameters like (i) Electric field profile [E(x)] (ii) Normalized current density profile [P(x)] (iii) Doping Profile (iv)Susceptance Vs Conductance characteristics (v) RF power output (vi) Negative resistivity profile [R(x)] (vii) Quality factor profile [Q(x)] of the diodes through simulation scheme. It is being observed that the wide band gap semiconductors are with higher efficiency (12.09 %) compare to normal Si, Ge at Ka-band and because of the relatively high breakdown voltage also power output is highest as 14.3142 W for InP compare to other material.
关键词：Ka-band IMPATT; IMPATT with wide band;gap materials; DDR IMPATT; Small signal Analysis of Ka band;IMPATT.
