期刊名称：International Journal of Soft Computing & Engineering
电子版ISSN：2231-2307
出版年度：2013
卷号：3
期号：2
页码：75-78
出版社：International Journal of Soft Computing & Engineering
摘要：The effect of photo illumination on the d.c and small signal performance of diamond based IMPATT diode operating at W-band is investigated using a modified double iterative simulation method. Under optical illumination additional photo generated carriers are produced in the device which modulates the admittance and negative resistance properties of the diode. It is found that the operating frequency shift upward accompanied by degradation of negative conductance, negative resistance, quality factor and output power density level under photo illumination. Decrement in the values of negative conductivity by 19.2 % and in total negative resistance by 21 % has been observed when the diode is exposed to photo illumination. It is also established that the d.c properties of the diode become inferior as the intensity of optical illumination increases.
